Abstract
ABSTRACTThe sub-nanosecond electrical transients induced by 5-MeV He+ and 10-MeV Si3+ ions have been measured in single-crystal, natural type Ila diamonds. The detectors were fabricated into conductivity modulated devices and were incorporated into 50-Ω high bandwidth transmission line structures. The electrical signals were recorded with a system based on a 70 GHz random sampling oscilloscope with the total recording rise time of 18.6 ±:0.6 ps.Signal rise times are less than 70 ps and fall times are less than 200 ps for electric fields in the range 3.8x104 - 1×105 V/cm. The plasma time appears to play a key role in defining the initial stages of the charge transport because signal rise times are much greater than the recording system rise time, especially with the Si-ion excitation. Furthermore, incomplete charge collection is quite severe even at the highest applied electric fields due to the dominance of carrier trapping/recombination at the defect sites.
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