Sub-micron fine structure of GaN by metalorganic vapor phase epitaxy (MOVPE) selective area growth (SAG) and buried structure by epitaxial lateral overgrowth (ELO)

Abstract

Sub-micron GaN dot structure has been realized by selective area growth (SAG) using metalorganic vapor phase epitaxy (MOVPE). A truncated hexagonal sub-micron dot having a (0001) plane and {11̄01} facet was obtained by SAG on SiO2 dot pattern fabricated by laser holography. Morphology of the GaN lines depends on the crystal axis of the sub-micron line patterns. The lateral growth rate to the line pattern along the 〈11̄00〉 direction is much faster than that along the 〈112̄0〉 direction. The GaN line structures coalesce easily on the sub-micron line patterns along the 〈11̄00〉 axis, resulting in buried structures of the SiO2 mask.