Abstract
We report on a technology for the fabrication of sub-micrometer sized cross-typeJosephson tunnel junctions in niobium technology. We present the fabrication schemeand properties of cross-type junctions with linear dimensions from 10 down to0.6 µm. Sidewall passivation of the junctions is achieved by anodization as well as by planarizingthe junctions with SiO in a self-aligned deposition step. The measured ratio of the sub-gapresistance to the normal resistance is about 35. Because of their low sub-gap current andlow parasitic capacitance such junctions are well suited for applications like high resolutionSQUIDs.
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