Abstract
The precise engineering of the graphene crystal structure at the atom level, enabled by the recent advances in approaches to synthesis, has driven a renewed surge of interest in graphene nanoribbons (GNRs), the electronic properties of which can be tuned by the arrangement of atoms at their edges. This technological option opens up the possibility of devising alternative devices based on carrier transport through topological states. In this work, by means of multiscale calculations, we investigate field-effect transistors based on topological GNRs with shaped edges, demonstrating the possibility of obtaining large negative differential transconductance effects, beating the Boltzmann limit for thermionic injection.
Highlights
After more than 15 years, graphene keeps attracting a big part of the research interests in the field of materials science
The precise engineering of the graphene crystal structure at the atom level, enabled by the recent advances in synthesis approaches, has driven a renewed surge of interest in graphene nanoribbons (GNRs), whose electronic properties can be tuned by the arrangement of atoms at their edges
By means of multiscale calculations we investigate field-effect transistors based on topological GNRs with shaped edges, demonstrating the possibility of obtaining large negative differential transconductance effects, beating the Boltzmann limit for thermionic injection
Summary
After more than 15 years, graphene keeps attracting a big part of the research interests in the field of materials science. In this work we investigate a particular family of GNRs with choreographed width To this purpose, we combine tight-binding calculations of the bandstructure, that have been demonstrated to be in excellent agreement with the experimental observations [10, 11], and quantum transport simulations within the framework of Non-Equilibrium Green Functions [12] that are selfconsistently solved with the 3D Poisson equation, in order to determine the device performance in the ballistic regime. The particular shape of the GNR bandstructures results in the observation of two effects of interest: i ) a pronounced negative differential transconductance, and ii ) a current modulation below the Boltzmann limit at room temperature
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