Sub-Circuit Based SPICE Model for High Voltage LDMOS Transistors

Abstract

High voltage lateral DMOS transistors are very difficult to model due to the complex structure. As a result of complexity and the range of variation in transistor structure no general LDMOS model exists. Standard SPICE models of MOSFETs, JFETs together with a resistor have been used in the sub-circuit model. Self-heating effects have been included in a specially design unit. The model shows good overall accuracy.