Abstract
Sub-band level assisted conduction mechanisms are well known in the field of semiconducting materials. In this work, we explicitly show the validity of such a mechanism in the multiferrroic material BiFeO3 (BFO). Our study is based on two different systems of epitaxial thin films of BFO, relaxed and strained. By analyzing the spectral distribution of the photoresponse from both the systems, the role of the sub-band levels in the photoconductive phenomena becomes evident. Additionally, the influence of epitaxial strain on the trapping activity of these levels is also observed. A model is proposed by taking into account the reversal of the role of a sub-band gap level, i.e., from a trapping to a ground state.
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