Sub-5 nm ultrathin IGO film transistor printed by micro-doped InGa liquid alloy

Abstract

In this study, we introduce a novel perspective that the formation of the atomically ultrathin oxide layer on the surface of liquid alloys is primarily governed by thermodynamic laws and is additionally influenced by the surface tension of the liquid alloys. In this case, we control the competition of Gibbs free energy and surface tension to effectively address the severe segregation problem of Ga2O3 and realize the precise doping of Ga2O3 in the preparation process of two dimensional IGO film through the liquid InGa alloy printing approach. Importantly, the Ga2O3 content in the IGO films can be tailored in the full range and a sub-5 nm ultrathin IGO film transistor is innovatively fabricated. The oxidation law, band gap, Fermi level, field-effect mobility, subthreshold swing, and other properties of IGO films in sub-5 nm scale are systemically investigated in detail. It has been demonstrated that the incorporation of Ga2O3 in the doping process dramatically reduced the device's turn-off current and enhanced its ability to resist ultraviolet interference. This novel doping process opens up a significant opportunity for future developments of atomically ultrathin transparent conducting film.