Abstract
Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm−1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.
Highlights
Various assessments of the trends in population, urbanisation, energy and resources etc. and their implications call for environmental sustainability
InAs/GaAs Qdot lasers possess the distinct advantages of reduced threshold current density, temperature sensitivity, filamentation and mirror degradation, enabling the realisation of high-power and high-performance devices [1]
The short wavelength emission of ∼ 1060–1200 nm has recently attracted attention because of the possibility of coherent light generation in the green–yellow–orange wavelength band via frequency doubling, a cost-effective and compact device for potential incorporation in pico-projectors, semiconductor laser based solid state lighting etc. [1, 2]. This short wavelength region was dominated by the highly strained InGaAs/GaAs and InGaAsN/GaAs multiple-quantum well active region laser designs until recently as-grown (AG) InGaAs/GaAs Qdot based lasers emitting at ∼1060–1100 nm have been reported with high power, temperature stability and high gain [1, 3]
Summary
Various assessments of the trends in population, urbanisation, energy and resources etc. and their implications call for environmental sustainability. InAs/GaAs Qdot lasers possess the distinct advantages of reduced threshold current density, temperature sensitivity, filamentation and mirror degradation, enabling the realisation of high-power and high-performance devices [1].
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