Abstract

Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm−1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.

Highlights

  • Various assessments of the trends in population, urbanisation, energy and resources etc. and their implications call for environmental sustainability

  • InAs/GaAs Qdot lasers possess the distinct advantages of reduced threshold current density, temperature sensitivity, filamentation and mirror degradation, enabling the realisation of high-power and high-performance devices [1]

  • The short wavelength emission of ∼ 1060–1200 nm has recently attracted attention because of the possibility of coherent light generation in the green–yellow–orange wavelength band via frequency doubling, a cost-effective and compact device for potential incorporation in pico-projectors, semiconductor laser based solid state lighting etc. [1, 2]. This short wavelength region was dominated by the highly strained InGaAs/GaAs and InGaAsN/GaAs multiple-quantum well active region laser designs until recently as-grown (AG) InGaAs/GaAs Qdot based lasers emitting at ∼1060–1100 nm have been reported with high power, temperature stability and high gain [1, 3]

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Summary

Introduction

Various assessments of the trends in population, urbanisation, energy and resources etc. and their implications call for environmental sustainability. InAs/GaAs Qdot lasers possess the distinct advantages of reduced threshold current density, temperature sensitivity, filamentation and mirror degradation, enabling the realisation of high-power and high-performance devices [1].

Results
Conclusion

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