Abstract
State-of-the-art halide perovskite solar cells have bandgaps larger than 1.45 eV, which restricts their potential for realizing the Shockley-Queisser limit. Previous search for low-bandgap (1.2 to 1.4 eV) halide perovskites has resulted in several candidates, but all are hybrid organic-inorganic compositions, raising potential concern regarding device stability. Here we show the promise of an inorganic low-bandgap (1.38 eV) CsPb0.6Sn0.4I3 perovskite stabilized via interface functionalization. Device efficiency up to 13.37% is demonstrated. The device shows high operational stability under one-sun-intensity illumination, with T80 and T70 lifetimes of 653 h and 1045 h, respectively (T80 and T70 represent efficiency decays to 80% and 70% of the initial value, respectively), and long-term shelf stability under nitrogen atmosphere. Controlled exposure of the device to ambient atmosphere during a long-term (1000 h) test does not degrade the efficiency. These findings point to a promising direction for achieving low-bandgap perovskite solar cells with high stability.
Highlights
State-of-the-art halide perovskite solar cells have bandgaps larger than 1.45 eV, which restricts their potential for realizing the Shockley-Queisser limit
While halide perovskites are extremely versatile in composition, the perovskite absorber materials in the state-of-the-art Perovskite solar cells (PSCs) are generally based on CH3NH3PbI3 (MAPbI3) and HC(NH2)2PbI3 (FAPbI3)
It is clear that continued improvements in the processing and microstructural engineering of low-bandgap perovskite thin films will further boost the power conversion efficiency (PCE), which may eventually surpass the PCEs of the state-of-the-art PSCs
Summary
State-of-the-art halide perovskite solar cells have bandgaps larger than 1.45 eV, which restricts their potential for realizing the Shockley-Queisser limit. Controlled exposure of the device to ambient atmosphere during a long-term (1000 h) test does not degrade the efficiency These findings point to a promising direction for achieving low-bandgap perovskite solar cells with high stability. It is clear that continued improvements in the processing and microstructural engineering of low-bandgap perovskite thin films will further boost the PCE, which may eventually surpass the PCEs of the state-of-the-art PSCs. all the reported high-performance low-bandgap perovskites invariably contain a significant portion of organic component (MA+ or FA+) occupying the A-sites in the AMX3 perovskite structure, where M is Pb2+ or/and Sn2+ and X is a halide anion. It is shown that a rational strategy of interface functionalization further stabilizes the CsPb0.6Sn0.4I3 perovskite thin films and passivates the defects, making CsPb0.6Sn0.4I3 perovskite a promising candidate for use in low-bandgap PSCs. High-PCE PSC devices are achieved with promising long-term operational and shelf stabilities
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