Abstract
We report the experimental results of the first MOSFET's ever fabricated using a laser plasma-source X-ray stepper. The minimum gate length of these transistors is 0.12 μm with an effective channel length of 0.075 μm. These transistors were patterned using a mix-and-match lithography scheme where the gate level was printed using a 1.4 nm plasma-source X-ray stepper while the other layers were patterned using optical lithography.
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