Abstract
The high frequency acoustic phonons employed in Raman–Brillouin scattering are used to probe native oxide layers on Ge film surfaces in GeO2/Ge/In x Ga1–x As heterostructures. The thermal instability of GeO2 results in the production of GeO gas on Ge surfaces; molecules of this gas evaporate through the porous GeO2 layers. As a result, the Ge/GeO2 interface is depleted of Ge, and a sub-stoichiometric GeO x layer is formed. By comparing photoelastic modeling and experimental results, we discovered a 0.5 nm thick interfacial region between the film and the oxide, demonstrating the sensitivity of acoustic phonons to the subnanometer scale.
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