Abstract
In the present work, the interaction between electrons and holes in semiconductor materials is investigated. According to the excitation process, the optical-elastic-thermal-diffusion (OETD) process is considered when the medium is exposed to a strong magnetic field and laser pulses. Photo-elastic and photo-electronics deformations are taken into account when the Hall current impact appears due to the magnetic field pressure on the semiconductor medium. Due to the complexity of the model, the governing equations that describe the system in one dimension (1D) are studied. Mathematical transformations (Laplace transform) were used to simplify the equations to obtain the physical quantities under study which were affected by laser pulses. To obtain complete solutions, some conditions were obtained from the free surface as well as from a mechanical ramp type and pulse heat flux, and then numerical transformations were applied using the inverse Laplace transform. Under the influence of several variables in this question, the results were explained graphically for silicon (Si) material and the results were analyzed in terms of their physical significance.
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