Studying the linear and nonlinear optical properties of trifluoroethoxy-coated zinc phthalocyanine ((4TFEO) 4-ZnPc) thin films

Abstract

Trifluoroethoxy-coated zinc phthalocyanine (4TFEO) 4-ZnPc thin films were prepared using the spin coating process. The crystal structure of powder and different temperature annealed thin films was examined using X-ray Diffraction (XRD), which confirmed the amorphous character for the powder, as-deposited and annealed films. Raman spectroscopy analysis revealed that samples exhibited comparable active modes. Due to the strong carbon-fluorine bond and fluorine's high electronegativity, spectrophotometric studies in the UV–Vis–NIR region indicated that annealing temperatures of 373 and 473K had no discernible influence on the optical gap and optical constants of (4TFEO) 4-ZnPc thin films. The oscillator energy Eo and the dispersion energy Ed were obeyed the usual dispersion area (λ > 850 nm). Dielectric constants were determined to calculate optoelectronic characteristics such as the high-frequency dielectric constant ε∞, lattice dielectric constant εL, ratio of carrier concentration to the effective mass (N/m∗), and plasma frequency ωP. The third-order nonlinear susceptibility χ(3), nonlinear refractive index n2 and two-photon absorption coefficient βc of the (4TFEO) 4-ZnPc thin films were measured for the (4TFEO) 4-ZnPc thin films, which showed a good correlation with linear refractive index WDD parameters and optical gap. These findings will be a lead step to understand deeper linear and nonlinear optical properties of (4TFEO) 4-ZnPc thin films as a probable candidate for optoelectronic devices applications.