Studying the high-field electron conduction of tetrahedral amorphous carbon thin films by conducting atomic force microscopy

Abstract

The high-field electron conduction of tetrahedral amorphous carbon (ta-C) thin films substrate has been studied using a conducting atomic force microscope (C-AFM). The ta-C thin films with a high concentration of sp 3 bonding (80–90%) were deposited on Si by field arc deposition (FAD). The high-field “conductance” and surface morphology were mapped simultaneously. At low bias, the “conductance” exhibits inhomogeneities on a large scale, presumably due to thickness variations or interface defects. However, at high bias, the small difference in “conductance” due to thickness variations or interface defects was buried by the high intrinsic “conductivity.” It has also been shown that high field causes electric breakdown in these films by converting sp 3 bonding to sp 2 at high electric field.