Abstract
CdTe nanostructured thin films were grown on glass substrates by RF-magnetron sputtering at different deposition time periods (10, 20 and 30 min). The layers were characterized by FESEM, EDAX, XRD, Raman, UV–vis., PL spectra, also Seebeck effect and I–V-T measurements. It is found with increasing the deposition time: the size of cubic phase CdTe nano-grains were gradually increased and the stoichiometry of the layers improved, as consistent with the PL spectra of layers. The synthesized CdTe layers were then put in contact with an optimized CdS layer. The analysis of dark I–V data showed that the electrical properties of CdTe layer has crucial impact on rectifying ration (RR) of the prepared CdS/CdTe heterojunction diodes.
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