Abstract
The effect irradiation with swift heavy Xe ions at an energy of 167 MeV has on the structure and properties of a Zn-implanted SiO2 film is studied. The implantation of Zn ions is found to result in the formation of amorphous zinc nanoparticles around 10 nm in size at a depth near the projective range of zinc ions (Rp ≈ 40 nm) in the SiO2 film. Xe irradiation of the film dampens the exciton recombination–induced peak in the photoluminescence spectrum at a wavelength of 370 nm. It also raises the peak at 430 nm, which is associated with radiation defects. Bombarding the surface of the SiO2 film with Хе ions results in the formation of surface craters surrounded by hillocks, and the emergence of Zn-containing nanoparticles.
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