Abstract
A type n conductance of ZnO thin film was deposited on the p-Si filim by magnetron sputtering Al doped ZnO ceramic target, and the ZnO/p-Si heterojunction was preparated. The photoelectric properties, charge carrier transport mechanism were studied by testing the I-V, C-V characteristics with illumination and without illumination. The results shows that there exists a good rectifying properties and photoelectric response for ZnO/p-Si heterojunctions, and can be widely used in photoelectric detection and fields of solar cells. As the conduction band and valence band offset in the ZnO/p-Si heterojunction is too big, the current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at the forward voltage exceeds 1 V. The results suggest the existence of a large number of interface states in ZnO/p-Si heterojunction, and the interface states can be reduced and the photoelectric properties can be further improved.
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