Abstract
In this article, using a Silvaco TCAD simulator, the impact of Graphene Channel Double Gate Dual Gate Material Vertical tunnel FET on the analog and RF application is studied. We observed better results in DC characteristics such as drain current (ION), leakage current (IOFF), subthreshold swing (SS), DIBL as well as On current Off current ratio (ION/IOFF). Graphene Vertical tunnel FET proves that the structure is a magnificent candidate for analog and high-frequency range applications. The important figures of merit (FOMs) illustrated in this article are analog performance such as transconductance (gm), second-order transconductance (gg2), output conductance (gd), and VIP2. Due to the dual effect of the high mobility/ controllable band gap of graphene channel and band-to-band tunnel, the proposed structure greatly impacts the result.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
