Study the Emitter-Base Forward Current in Heterojunction Bipolar Transistors Using Python

Abstract

Abstract In GaAs-type materials, the primary mechanism for intra-valley scattering of low-energy electrons is their interaction with acoustic photons. These collisions are of the elastic and isotropic type, with their main effect being the nearly uniform scattering of the velocity vector of the electrons. Since the drift current in heterojunction bipolar transistors is proportional to the electric field, the contribution of the majority drift current cannot be neglected, as even a very small internal field produces a significant current when the number of carriers is very high. At the metallurgical heterojunction (x = 0), the total current is equal to the sum of the two thermionic emission components. The paper analyses the variation of the direct current of the Al0.3Ga0.7As/GaAs heterojunction, used as an emitter-base NP junction in heterojunction bipolar transistors, using the Python program.