Abstract
A polycrystalline CdS/CdTe heterojunction prepared by thermal evaporation technique at substrate temperature of 373 K and heat treatment for annealing temperature 573 K for different duration times of annealing (ta) 60 and 120 min. under vacuum of (10-5) mbar and different thicknesses of CdS layer of about 1000Å, 1500Å and 2000Å. The X-ray diffraction (XRD) technique shows polycrystalline structure and had a mixture of cubic and hexagonal structure.The recrystallization of films enhanced thermally represented by increasing the grain size. The CdS/CdTe heterojunction with the higher thickness of CdS layer shows better crystal structure
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