Abstract
Zinc oxide (ZnO) thin films deposited on silicon and glass substrate were prepared using chemical vapor deposition (CVD) method utilizing zinc acetate dihydrate as the zinc sources. The deposited film then annealed at 300° C to 500° C for 1 hour. The optical and structural properties of ZnO thin films were characterized using photoluminescence (PL) and Scanning Electron Microscopy (SEM) respectively. SEM images show that the ZnO thin film on silicon substrate formed unique morphology of flower‐like and ball‐shaped structures at annealing temperature 300° C and 400° C. Increasing annealing temperature to 450° C for ZnO deposited on glass substrate had increased the grain size of particle which implies the improvement of crystalline grain of thin film. PL results observed that the defect of oxygen vacancy decreased after annealing process for films deposited on silicon substrate. The blue peak emission at 437 nm appears only on the glass substrate. Based on the highest PL intensity value, the optimum annealing temperature for silicon and glass substrate is 350° C and 450° C respectively.
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