Abstract
Zinc oxide films (ZnO) are prepared by an electrolysis technique and without vacuum and then annealed atvarious temperatures (300,400,500)OC for an hour. The structural analysis performed by X-Ray diffraction (XRD) shows,dominant orientation of this films is plane (101), has a hexagonal structure and polycrystalline pattern and it was is found that the crystal size increases(24,29) nm at annealing temperatures (300, 400)° C, but the crystal size decreases to (20 nm) at annealing temperature (500 ° C). As the results of a surface nature study of these films showed by examining the atomic force microscope (AFM), the grain size increases from (60.79 to 88.11) nm, and the surface roughness increases from (1.99 to 2.34) nm when increasing annealing temperatures is (300,400,500)°C, respectively.
Highlights
Zinc oxide (ZnO) is a semiconductor compound of the II-VI family, [1]
By examining the X-ray diffraction, it was found that the (ZnO) films had a polycrystalline structure of hexagonal type when compared with the International Center for Diffraction Data for zinc oxide
3-2 Atomic Force Microscopy By examining the (AFM) to investigate the surface topography we know the effect of annealing at various temperatures is (300,400,500)°Con zinc oxide films and as shown by the grain size and surface roughness, we found that the granular size values increase within the nanoscale range (60.79-88.11)nm, and an increase in the surface roughness values (1.992.34) nm, which leads to an increase in absorbance
Summary
Zinc oxide (ZnO) is a semiconductor compound of the II-VI family, [1]. Zinc has characteristics such as the presence of an optical energy gap (3.37eV) and a large exiton binding energy (60 meV) at room temperature [2,3]. Where it has absorbance, it is located in the UV zone and has good conductivity at n-type[4].
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