Abstract
In this work, two configurations (planner and sandwich) structures of (Al/n PSi/n-Si/Al) porous silicon (PSi) gas sensor have been fabricated and tested extensively for CO2 gas molecules. Two laser wavelength infrared and violet of (810 nm) and (405 nm) was used in the laser assisting etching process on the n-type silicon substrate. The gas detection characteristic of planner and sandwich configuration were studied under different condition. The resistance measurement, for the planner and J-V characteristic for sandwich structures, which was analyzed based on the nano-sized silicon, porosity, layer thickness, and the effective dielectric constant of the PSi layer. The SEM image of the PSi layer showed the formation pore-like structure with cylindrical and rectangular pore shape with different dimensions for infrared illuminated PSi and crossed pores-like structure with randomly distributed for violet illuminated PSi. The sensing mechanism for sandwich structure configuration is governed by the porous silicon parameters, while for planer configuration the silicon channel among the pore has a significant role in sensing process.
Highlights
There is a growing importance in developing able and economically gas sensors for detecting the leakage of different gases harmful
The result showed was that the porous silicon (PSi) layer has high sensitivity to the organic vapors
To obtain a homogeneous distribution of the gas molecule on the porous silicon gas sensor, the measurements were performed after 1 minute of turning on the gas flow
Summary
There is a growing importance in developing able and economically gas sensors for detecting the leakage of different gases harmful. Has been detection many of organic materials, including DNA, measured by PSi sensors have been reported. A comparative study was carried out on two fabricated porous silicon gas sensor configuration (planner and sandwich). To obtain a homogeneous distribution of the gas molecule on the porous silicon gas sensor, the measurements were performed after 1 minute of turning on the gas flow. The porous silicon gas sensor was fabricated using silicon wafer (100) n-type of resistivity ranging of about (10 .cm). After the formation of the PSi layer, the required deposition Aluminum electrode is deposited onto the surface of the porous silicon and the rare surface of crystalline silicon to produce electrical contacts for device testing. The planer configuration was obtained deposit two different E-letter Aluminum electrode on the PSi layer. The current-voltage characteristic was performed in the small sealed dark chamber under a controlled gas flow at various
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