Abstract
The feedback field-effect transistor (FBFET) is a new type of transistor that uses a positive feedback mechanism, which enables the FBFET to exhibit steep-switching characteristics, i.e., subthreshold swing (SS) < 60 mV/decade at 300 K. The silicon-on-insulator (SOI) FBFET, which was studied previously, can be optimized by adjusting the fin height and fin width. For a given effective channel width, a device with low average SS and high ON-state drive current can be designed by stacking gate-all-around channels. In this article, for given various design parameters, the performance metrics of various stacked SOI FBFET device structures are compared. In addition, we investigated the transient characteristics of the SOI FBFETs. Using mixed-mode simulations, we confirmed whether the ON– OFF switching characteristics are completely implemented over time or not.
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