Abstract
Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system. After evaporating Ohm contact electrode on the side of substrate and on the side of nc-Si:H film, a structure of electrode/(p)nc-Si:H/(n)c-Si/electrode was obtained. It is confirmed by electrical measurement such as I– V curve, C– V curve and DLTS that this is a variable capacitance diode.
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