Study on ultrafast imaging of silicon surface ablated by a single nanosecond laser pulse

Abstract

We present a technology of ultrafast imaging using femtosecond laser as probe light and ICCD camera as imaging instrument. And we obtained time-resolved ICCD images of a single nanosecond laser pulse (30 ns laser pulse with a wave length of 1064 nm) ablation of silicon surface taking advantage of this technology. This research shows that when a single nanosecond laser pulse was focused onto the silicon target, it induced plasma firstly. The produced plasma was very much and its propagation was very fast at first. And when the nanosecond laser pulse passed, the amount and propagation of the plasma didn’t increase any more until it disappeared.We present a technology of ultrafast imaging using femtosecond laser as probe light and ICCD camera as imaging instrument. And we obtained time-resolved ICCD images of a single nanosecond laser pulse (30 ns laser pulse with a wave length of 1064 nm) ablation of silicon surface taking advantage of this technology. This research shows that when a single nanosecond laser pulse was focused onto the silicon target, it induced plasma firstly. The produced plasma was very much and its propagation was very fast at first. And when the nanosecond laser pulse passed, the amount and propagation of the plasma didn’t increase any more until it disappeared.