Study on Total Ionizing Dose Effect of Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors at High and Low Dose Rates

Abstract

The total ionizing dose (TID) radiation effect of silicon carbide metal oxide semiconductor field-effect transistors (SiC MOSFETs) was investigated at different dose rates. The influence of irradiation dose rate on the transfer characteristic curves of the devices was investigated. And the threshold voltage, oxide trap charge, interface state, and peak transconductance et al. were further extracted based on the transfer curve. The results show that the degradation degree of irradiated devices varies at different dose rates due to the different factors. The degradation of the device at high dose rate is due to the radiation-induced oxide trap charge in the gate oxide layer, while the reason of the degradation at low dose rate is the radiation-induced oxide trap charges and interface state simultaneously, which have opposite effects on the devices, and the degradation degree depends on the competition between the two.