Abstract
The phase-change characteristics of Ge2Te3 films for phase-change random access memory applications were investigated by doping with TiO2 using magnetron cosputtering. The first and the second phase transitions, which corresponded to the crystallizations of GeTe and Te, occurred at around 210 °C and 225 °C for the Ge2Te3 film, respectively. The incorporation of TiO2 suppressed the crystallization of GeTe and held back the phase transition induced by the Te. The precipitation of aggregated GeTe from Ge2Te3–TiO2 was observed at the annealing temperature of 400 °C. The resistance ratio between RESET and SET states exceeded two orders of magnitude. Compared with Ge2Sb2Te5-based cell device, the Ge2Te3–TiO2 film-based ones had a lower power consumption. The reversible phase change could be accomplished by the electric pulse duration of 50 ns for Ge2Te3–TiO2 with 15 at% TiO2-based cell device.
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