Abstract
The Vt variation of TiN-metal buried-gate (BG) cell transistors in DRAM is characterized. The use of TiN gate shows a large Vt variation and is attributed to the formation of chlorine (Cl)-related trap sites during the etch-back process of the metal gate. This indicates that the Cl component in the chemical vapor deposition (CVD) process of the TiN gate is responsible for such a phenomenon. Reduction of the Vt variation is achieved by rapid thermal annealing (RTA) after the etch-back process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
