Abstract
Cu(In1−x,Alx) Se2 or Cu(In,Al)Se2 (CIAS) thin films were prepared by dc magnetron sputtering method and three different selenization processes. Morphology, composition, microstructure, optical and electrical properties was investigated by scanning electron microscopy (SEM), energy dispersive analysis (EDX), X-ray diffraction (XRD), four probes method and optical transmittance, respectively. The results show that one-step method is the most effective and simplest selenization process. Morphology analysis shows that longer selenization time and higher annealing temperature result in the larger CIAS particles. The value of [Se]/[Me] increases with [Cu]/[In+Al] ratio increasing. XRD results show that the amorphous sputtered CuInAl (CIA) precursors transform into single-phase chalcopyrite CIAS films after annealing at 500°C. The resistivity of CIAS films increase with the Cu]/[In+Al] and [Se]/[Me] ratios increasing. Optical studies reveal that the films have good optical absorption properties.
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