Abstract
The working temperature of BIPV modules is high than ground-mounted PV. Based on the theory of material mechanics and thermal stress analysis, the stress distribution of metallization interconnects system for crystalline silicon solar module in BIPV was studied for the first time. The shear stress and normal stress distribution of soldered structure for crystalline silicon solar cell under the thermal field were discussed. And the results show the stress distribution is not simply linear relationship as some results found. But there is a stress concentration at the edge, which was considered as the true reason that caused V-notch at the edge of soldered solar cell. The conclusions we got in this paper provide a theoretical basis for reliability of c-Si BIPV modules.
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