Abstract
In this article, the properties of the intrinsic and doped Si AlGaInP surfaces are investigated by the ellipsometry. The results show that the oxide films on AlGaInP are thicker than those on common semiconductors, and have small absorption in visible light range. Moreover, the growth rates of oxide film on AlGaInP exposed to room air are obtained by the null ellipsometry, and plots of thickness vs. the logarithm of the time in room air are linear. In addition, Rutherford Backscattering (RBS) technique is also utilized to analyze the AlGaInP surface. The RBS spectrum show that AlGaInP (intrinsic) is grown better than AlGaInP (doped Si). But, this technique is not sensitive to the oxide on AlGaInP compared with the ellipsometry.
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