Abstract
The specific contact resistance of golden contacts made by electroplating or evaporation for p-type InAs:Be and n-type InAs:Si epitaxial layers grown by MBE was studied. The Circular Transmission Line Model (CTLM) was applied to determine the specific contact resistance. The measured specific contact resistances were correlated with metallization method and Hall concentration of holes and electrons. The lowest resistances were obtained for highly Be and Si doped layers. It was shown that high quality low resistance contacts can be obtained by gold electroplating, especially for highly Be and Si doped InAs layers.
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