Abstract
The hysteretic and reversible polarity-dependent resistive switching effect has been studied in epitaxial La 0.67Sr 0.33MnO 3 (LSMO) films under DC bias stress and voltage pulses. A distinct current–voltage characteristic of the Ag/LSMO system with pronounced nonlinearity, asymmetry and hysteresis was observed, which is considered to be a precursor sign of the resistance switching. The pulsed voltage amplitude and duration dependence of the nonvolatile resistive switch were provided. Reproducible switching properties, involving non-symmetrical R – V hysteresis loop, active pulse width window and stepwise multilevel switchable capability, demonstrate well controllability with respect to future nonvolatile memory applications.
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