Abstract
Most research about Light and elevated Temperature Induced Degradation (LeTID) is focused on multicrystalline silicon (mc-Si). In this work, the degradation kinetics of Czochralski-grown monocrystalline silicon (Cz-Si) induced by light at an elevated temperature were studied in detail. The lifetime evolutions over time during (1) light soaking (LS), (2) dark annealing–light soaking (DA–LS), and (3) DA–LS cycling experiments were analyzed. Ratios of the capture coefficients for the electrons and holes (k-values) were used to characterize the possible defects responsible for degradation. We found that the behavior of degradation and recovery under light soaking with or without a dark annealing treatment was mostly like boron–oxygen (BO)-related degradation but gave k-values from 19 to 25. In the DA–LS cycling experiment, the max degradation amplitudes hardly changed from the second cycle, and the k-values decreased with an increase in the cycling number. We then analyzed the possible reactions in Cz-Si and discuss the relationship between BO defects and LeTID.
Highlights
For the light induced degradation (LID) of photovoltaic crystalline silicon solar cells, early studies mainly focused on boron–oxygen (BO) defects [1,2,3,4], which led to a decrease in power during operation.Because of its higher concentration of oxygen, BO–LID resulted in a more serious degradation of Czochralski-grown monocrystalline silicon (Cz-Si)
The results indicated that Light and elevated Temperature Induced Degradation (LeTID) defects may be
The absence of, or an incomplete, BO defect in the degradation state, while in the DA–light soaking (LS) cycling cycling experiment, it was found that the maximum degradation amplitude almost did not change experiment, it was found that the maximum degradation amplitude almost did not change from the from the second cycle, but the k-values decreased with an increase in the cycling number
Summary
For the light induced degradation (LID) of photovoltaic crystalline silicon solar cells, early studies mainly focused on boron–oxygen (BO) defects [1,2,3,4], which led to a decrease in power during operation. Emitter and Rear Contact (PERC) solar cells, scientists have observed new degradation and recovery behaviors induced by light that have nothing to do with BO defects and are triggered by high temperatures. In this phenomenon, the defect precursors (interstitial H) are slowly depleted by DA, and the BH concentration can be modulated by a dark annealing treatment. Researched work in the literature indicated that LeTID-related defects may exist in Cz-Si model exhibits good agreement with the experimental data, so it is used in this paper. Using dark annealing without light soaking, Chen et al found that the k-value of Cz-Si was Researched work in the literature indicated that LeTID-related defects may exist in Cz-Si [19,20].
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