Abstract
The effect of particle size factors of nano-silica colloidal abrasives on chemical mechanical polishing (CMP) of sapphire wafers was studied. Under the same CMP condition, uniform monodisperse particle size abrasives and mixed particle size abrasives were prepared for polishing experiments, and the dispersion of the abrasive particle size and the surface roughness of the polished wafer were obtained by transmission electron micrograph (TEM) and atomic force microscope (AFM), respectively. The results demonstrate that the abrasive with mixed particle size has better effect on the material removal rate (MRR) than the abrasive with uniform particle size, which is up to 7.22 μm/h, and the effect of abrasive particle size on CMP performance is revealed.
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