Abstract
In this paper, the properties of indium nitride (InN) semiconductor films deposited by magnetron sputtering were studied. The effects of different substrates (Al2O3, ITO and Si) and different nitrogen-argon flow ratios on the crystal quality of InN films were compared. The crystal structure, surface morphology, optical and electrical properties of InN films were systematically studied. The results showed that the crystallization quality of InN thin film was the best when the flow ratio of nitrogen to argon was 30/0 on Al2O3 substrate. Then the p-NiO/n-InN/AlN heterojunction device was prepared on Al2O3 by using AlN as buffer layer, and the electrical properties of the devices at different operating temperatures were analyzed. Finally, high rectification characteristics and good temperature stability were obtained. This study provides a reference for the preparation of InN films on different substrates and the application of InN-based devices.
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