Study on the Performance of Flexible Memory Device Based on Antimony Film

Abstract

Antimony films and devices based on polyether-ether-ketone (PEEK) flexible substrates were fabricated. After bending at different radii for 24 hours, the antimony film still achieved a complete phase transition after heating. When the bending cycle was more than 10000 times, the resistance difference between amorphous and crystalline states kept more than one order of magnitude. With the increase of bending times, grains tended to be refined, resulting in a wider band gap. The good ductility of antimony film made it have small resistance drift in tensile state. The reversible SET and RESET operations were realized in bending phase change memory device. Antimony films based on PEEK substrates had great potential applications in flexible phase change memories.