Study on the optoelectronic properties of amorphous selenium-based photoreceptors

Abstract

Due to its superior photosensitivity in the visible wavelength region, amorphous selenium-based material is widely used as the basic photoreceptor material in xerography. The optoelectronic properties of the samples were measured and calculated with photoinduced discharge curve (PIDC) by using Electrostatic Paper Analyzer, and the initial surface potential (V so), dark decay time (t d), photosensitivity (E 1/2) and residual potential (V r) could be obtained. It is found that the contrast voltage which affects directly the resolution of image can be improved by the blocking layer between the bulk (such as a-Se, a-As2Se3) and substrate (Al). Furthermore, the relations between thickness and optoelectronic properties of photoreceptor could be identified, and compared with different blocking layers and isothermal annealing effect for the photoreceptors.