Study on the New Structure of the Solar Blind Ultraviolet Detector

Abstract

Four square metal electrodes are prepared by electron beam evaporation system, respectively between the electrodes reverse insertion of a zener diode regulator tube by molecular beam epitaxy on (0001)—plane sapphire substrates growth β-Ga2O3 films, in gallium oxide thin film preparation four 50 um square area. The solar blind UV detector was prepared, measured the V-I curve, is connected with a zener diode by experiment data, it is shown that the solar blind ultraviolet detector of dark and light signals ratio reached nearly 50 times, its performance is not weaker than additional MSM fork electrode structure solar blind ultraviolet detector. Solar blind ultraviolet detector assisted by Zener diode structure has good performance, structure is more simple and greatly reduce the difficulty of fabrication process, compared with the traditional MSM fork to the electrode structure. The miniaturization of the device can be easily realized, is very suitable for developing large area solar blind ultraviolet detection array.