Abstract
Pt/Nd:SrTiO3 (STO)/In devices were fabricated by depositing Schottky-contact Pt and Ohmic-contact In electrodes on a single crystal STO with Nd doping. The Pt/Nd:STO/In devices show multi-level resistance-switching (RS) memory and memory-state-dependent photovoltage (PV) effects, which can be controlled by the applied pulse width or magnitude. Both the RS and PV are related to the bias-induced modulation of the interface barrier, both in height and width, at the Pt/Nd:STO interface. The results establish a strong connection between the RS/PV effects and the modulation of the Nd:STO interface triggered by applied electric field and provide a new route by using an open-circuit voltage for non-destructively sensing multiple non-volatile memory states.
Highlights
SrTiO3 (STO) is a large bandgap (3.2 eV) insulator
STO system has received a great deal of scientific attention due to the resistive switching (RS) phenomena, which can be considered as a good candidate for building the resistive random access memory (RRAM) [4, 5]
The results suggest that the shared mechanism for RS and PV relates to the modulation of the Pt/Nd-doped STO single crystals (Nd):STO interface barrier, which are induced by the injection and trapping or detrapping of carriers
Summary
It is considered to be a model perovskite material due to its simple cubic structure in a wide temperature range [1]. STO has abundant photoelectric performance which can be directly manipulated via doping with a donor- or acceptor-type transition metal. The range of applications of STO system is very wide [2, 3]. STO system has received a great deal of scientific attention due to the resistive switching (RS) phenomena, which can be considered as a good candidate for building the resistive random access memory (RRAM) [4, 5]. The RS properties of STO system, i.e., from acceptor- to donor-doped STO, have been widely investigated. For acceptordoped (e.g., Fe and Cr) STO, the works emphasize the property change in the crystal bulk, in which the RS was attributed to electric-field-driven migration of oxygen vacancy, either the fast transport of oxygen vacancies
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