Abstract
Carrier-doping (or band-filling) dependence of electronic states is investigated in La 1−xSr xTiO 3 and Y 1−xCa xTiO 3 by heat capacity measurement. Coefficient of electronic specific heat, γ, is enhanced significantly near the metal-insulator phase transition boundary, indicating a divergent increase of the effective electron mass due to the strong electronic correlations on approaching the metal-insulator transition boundary.
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