Abstract
Compared with the conventional strained quantum well, the InGaAs/GaAsP strain compensated quantum well (SCQW) has better optical properties, as the well layer and the barrier layer lattice mismatch with each other which results in the introduction of stress. In this paper, we adopted the Kohn-Luttinger Hamiltonian, conducted some theoretical calculations using the transfer matrix method, and finally verified the following change trend of the InGaAs quantum well following the In-group through experiments: the growth of the low In-group can improve the epitaxial flatness of the active area; the growth of the high In-group can increase the wavelength as well as the strain. In this paper, we adopted the AlGaAs barrier material instead of the GaAsP, made an analysis on the level changes of the compensation quantum well, and successfully fostered the strain compensated quantum well structure using the metal-organic chemical vapor deposition (MOCVD) system which had better optical properties compared with the strained quantum wells.
Highlights
InGaAs is an important semiconductor material, whose carrier mobility is more than 10 times compared with the ordinary Si material
When design the large optical cavity (LOC) highpower lasers, high-quality quantum wells grown is our key consideration and the design of the InGaAs/AlGaAs strained quantum wells is the focus of the design direction
We found that the change trend of the energy band of the barrier material adopting the Al0.1Ga0.9As and Ga0.9AsP0.1 is consistent with the change trend of the transition wavelength
Summary
InGaAs is an important semiconductor material, whose carrier mobility is more than 10 times compared with the ordinary Si material. InGaAs has many potential applications in the new generation of optical fiber communication and lasers. The high-quality strained InGaAs quantum wells have been widely used in the optoelectronic devices. The laser performance [1,2] can be greatly improved by adopting the strained quantum well structure in the active layer. When design the large optical cavity (LOC) highpower lasers, high-quality quantum wells grown is our key consideration and the design of the InGaAs/AlGaAs strained quantum wells is the focus of the design direction. As the critical strain thickness of the strained quantum well is small, it is difficult to release stress. In the growth process of high In composition, the lattice defects may lead to the design limitations of the long wavelength
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