Abstract
The thermal stability of organic light‐emitting diodes (OLEDs) has attracted great attention with their application in display areas. In this article, the expansion of films under heat shock is studied. With the increase of annealing temperature, the contact between the organic and inorganic layers becomes inferior. Doping the host material uniformly in the adjacent light‐emitting layer is proposed to improve the stability of OLEDs under thermal shock. The results show that the optimized device still maintains a stable optoelectrical performance after thermal shock at 85 °C.
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