Abstract
In this paper we demonstrate the results of the study on how the geometric parameters effect the model parameters of passive and active components. As we found out, the substrate thickness has the greatest influence on the equivalent circuit model parameters of passive components. Paper demonstrates the influence of the gate length and the gate recess depth on the parameters of small-signal model of the MESFET. The obtained dependences are presented for the MIM capacitor model, inductor model and GaAs MESFET model.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Electronic engineering Series 2 Semiconductor devices
Paper Title
Journal
Date
