Study on the impact of the initialization process on the phase change memory

Abstract

The set processes of T-shape phase change memory (PCRAM) cell are compared to study the change caused by the initialization. After the initialization, PCRAM cell shows lower Vth and minor resistances than those of the 1st operation, which can be explained by the reduction of contact resistance caused by the formation of the crystalline phase change material interface (CPI) near the electrodes. The temperature transition regions between the programmed region and the electrodes preserve the CPI after its formation in the initial operation. Thus, we suggest the formation of CPI is the key role for the initialization.