Abstract

CZTS (copper zinc tin sulfide) is a promising candidate for solar cell applications. In this simulation-based work, the comparison of cell output variation is examined by considering the layer thickness as well as series and shunt resistances. When CuI is used as a hole transport layer (HTL), the Schottky barrier is reduced and efficiency is raised. The final optimized cell with CuI as the HT layer obtained a power conversion efficiency of 16.92%. The performance of the device was compared with and without HTL. The study’s findings pave the path for using CuI as an HTL for solar cell device production using CZTS.

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