Abstract
In this study, the IGZO target was synthesized through a pressureless oxygen atmosphere sintering technique, and the effects of sintering temperature on IGZO ceramic target were studied. The In2O3, Ga2O3 and ZnO powders in the mole ratio of 1:1:2 were selected as raw materials. The powders were mixed by ball milling, and then the granulation and pressing process were used in order to obtain the green compacts. Then the green compacts were sintered at different temperature under oxygen atmosphere. The microstructure characterizations and compositions of the IGZO ceramic targets were analyzed. The results indicated that the lower sintering temperature was beneficial for IGZO ceramics to form the regular polygonal grains. With the temperature increased, the densification of IGZO ceramics was highly activated, and the low porosity was obtained. The XRD results demonstrated that the single phase of InGaZnO4 had been generated at 1100°C and no phase transformation occurred between 1300°C and 1500 °C. However, the SEM results showed that the grain growth of IGZO target was very obvious at 1500°C. The IGZO ceramic had a highest relative density of 99.4% and optimal resistivity of 18 mΩ·cm at the sintering temperature of 1400°C.
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