Study On The Failure Mechanism Of IGBT Module Solder Layer Based On Temperature Field

Abstract

Insulated Gate Bipolar Transistor (IGBT) modules were considered to be the most widely used and most ideal power devices in the electronics and power industry due to their advantages in terms high voltage resistance, high current and fast response. As the number of applications for IGBT modules continues to expand, the power density of IGBT modules was increasing; while the package size was becoming smaller and smaller, the heat flow density inside the module was also increasing, and the harsh operating conditions were placing higher demands on the reliability of IGBT modules.The chip connection layer was regarded as one of the weakest components of the IGBT module package construction, with fatigue failure owing to high junction temperature and mechanical stress being the most common failure modes. This paper introduces the current status of research on the thermal reliability of welded IGBTs and the problems that exist, starting from the relevant research on the failure mechanism of IGBT modules at home and abroad in recent years, taking the damage to the welding layer of power devices as the starting point, and summarizing the forms and causes of failure of the solder layer of IGBT modules, including the problems of solder layer voids, interface peeling and cracks; establishing a three-dimensional geometric model of IGBTs, and using The ANSYS simulation software to analyse the thermal-structural multi-physical field coupling of the IGBT module, investigating the changes in the internal heat flow path of the chip solder layer, comparing the temperature field distribution of the IGBT module under steady-state operating conditions, and grasping the mechanism of the influence of the damage to the solder layer on the thermal characteristics of the IGBT module, in order to guide the improvement of the reliability of the IGBT module.