Abstract
Abstract. A series of ZnO thin film transistors (TFTs) using pyrochlore Bi 1.5 Zn ð1þyÞ Nb 1.5 O ð7þyÞ (BZN) thin filmsas gate insulators by RF sputtering has been fabricated. The relations between the zinc content and perfor-mance of BZN thin films and ZnO-TFTs are studied. The electrical properties of the ZnO-TFTs with BZNgate insulators as a function of Zn content are discussed. The research results showed that excess Zn(5 mol.%) can significantly enhance the performance of BZN thin films and ZnO-TFTs, which is mainly attributedto the compensation of Zn volatility during fabrication of BZN thin films. At an applied electric field of 250 kV∕cm,the leakage current density of BZN thin films with 5 mol.% excess Zn is approximately four order of magnitudelower than that of BZN thin films without excess Zn. The subthreshold and surface state density of ZnO-TFTswere decreased from 684 and 350 mV∕dec to 4.5×10 12 and 2×10 12 cm −2 , respectively, as Zn content wasincreased. © 2016 Society of Photo-Optical Instrumentation Engineers (SPIE) [DOI: 10.1117/1.OE.55.6.067106]
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